RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
AI Overview
Develop an innovative 200-mm GaN-on-Si technology platform to enable monolithic integration of high-performance RF frontend components like low-noise and power amplifiers. The solution aims to address current limitations in scalable semiconductor technologies for advanced radar, communication, and mobile applications.
This summary is AI-generated from the official solicitation.
Key Details
Official Description
In radio communication system, the RFE of the transceiver typically handles the receive and transmit function portion, whereas the baseband signal processing is typically implemented with digital logic. The radio communication system sensitivity requirements and output power are primarily dependent on the performance of the frontend circuit blocks, specifically the low-noise amplifiers (LNAs) and power amplifiers (PAs). Most of the current radar and military communication systems utilize either ...
View on official sourceChange History
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Status changed from Pre-Release to Open
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Q&A section updated
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Close Date changed from 2026-03-04 to 2026-04-29
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Open Date changed from 2026-02-11 to 2026-04-01
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Close Date changed from 2026-02-25 to 2026-03-04
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Open Date changed from 2026-02-04 to 2026-02-11
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Close Date changed from 2026-02-11 to 2026-02-25
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Open Date changed from 2026-01-21 to 2026-02-04
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Close Date changed from 2026-02-04 to 2026-02-11
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Open Date changed from 2026-01-14 to 2026-01-21
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Q&A section updated
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Q&A section updated
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Close Date changed from 2026-01-28 to 2026-02-04
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Open Date changed from 2026-01-07 to 2026-01-14
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Q&A section updated
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Close Date changed from 2025-12-31 to 2026-01-28
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Open Date changed from 2025-12-10 to 2026-01-07
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Q&A section updated
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Content updated: description, phase_2_description
RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
Content updated: description
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