Defect Metrology and Charge Trapping Dynamics in Transfer-Doped Diamond Transistors
AI Overview
This RFP seeks development of specialized metrology tools to measure and locate charge traps in diamond transistors, addressing current collapse issues that limit high-frequency RF power performance. The system must characterize trap density, energy levels, and locations across multiple device layers using government-provided diamond test devices.
This summary is AI-generated from the official solicitation.
Key Details
Official Description
Hydrogen-terminated (surface-channel) diamond transistors hold great promise for next-generation, high-frequency, high-power RF electronics and advanced communications due to diamond's high breakdown field and superior thermal conductivity. However, wide-scale operational deployment is constrained by "current collapse" and "knee walkout" - phenomena where transient charges trapped at defect sites in the semiconductor prevent the transistor from operating at its full, high-frequency RF power. Com...
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Defect Metrology and Charge Trapping Dynamics in Transfer-Doped Diamond Transistors
New opportunity: Defect Metrology and Charge Trapping Dynamics in Transfer-Doped Diamond Transistors
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