DPA26TZ06-DV004Pre-ReleaseSBIR

Scalable Hard-mask materials with Improved Etch resistance and Low Degradation for Extreme-aspect-Ratio fabrication (SHIELDER)

Department of DefenseDARPA

AI Overview

This STTR seeks innovative hard-mask materials that enable precise, high-aspect-ratio semiconductor fabrication for defense microsystems like 3D circuits and RF filters. Solutions should deliver superior etch resistance and minimal line-edge roughness while addressing current masks' stress, degradation, and pattern-distortion limitations.

This summary is AI-generated from the official solicitation.

Key Details

Agency
Department of Defense
Funding Amount
Release Date
September 2, 2026
Due Date
October 21, 2026

Official Description

Next-generation defense-relevant microsystem technologies, such as 3D integrated circuits, high-density memory arrays, MEMS inertial sensors and RF filters, and integrated photonic devices, rely on the precise manufacturing of extreme high-aspect-ratio features within a chip [1-3]. Furthermore, emerging architectures for multiferroic memory and logic components, such as those being pioneered under DARPA's Fast and Curious program [4], stand to benefit immensely from novel process flows capable o...

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Change History

Opportunity AddedSep 2, 2026 at 12:02 PM

Scalable Hard-mask materials with Improved Etch resistance and Low Degradation for Extreme-aspect-Ratio fabrication (SHIELDER)

New opportunity: Scalable Hard-mask materials with Improved Etch resistance and Low Degradation for Extreme-aspect-Ratio fabrication (SHIELDER)

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