OSW26TZ06-NV005Pre-ReleaseSBIR

Development of Ultrafast Nonvolatile Memory Based on Sliding Ferroelectricity in Moiré Polar Homostructures

Department of DefenseOSD

AI Overview

This RFP seeks development of ultrafast nonvolatile memory using sliding ferroelectricity in layered van der Waals materials to achieve superior speed, endurance, and energy efficiency compared to current memory technologies. The work requires multidisciplinary expertise in device design, fabrication, and characterization of atomically thin moiré structures.

This summary is AI-generated from the official solicitation.

Key Details

Agency
Department of Defense
Funding Amount
Release Date
September 2, 2026
Due Date
October 21, 2026

Official Description

Twisted stacks of van der Waals (vdW) crystals can form moiré superlattices with polar domains whose dipoles are antiferroelectrically aligned and controllable by applied electric fields [1]. Sliding ferroelectricity arises from nm-scale interlayer sliding in vdW materials, coupling in-plane atomic displacement to out-of-plane polarization switching [2]. This mechanism has been demonstrated in bilayer hexagonal boron nitride and semiconducting transition metal dichalcogenides, where polarization...

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Change History

Opportunity AddedSep 2, 2026 at 12:03 PM

Development of Ultrafast Nonvolatile Memory Based on Sliding Ferroelectricity in Moiré Polar Homostructures

New opportunity: Development of Ultrafast Nonvolatile Memory Based on Sliding Ferroelectricity in Moiré Polar Homostructures

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